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Post-hydrogenation of low-pressure chemical vapour deposited amorphous silicon
Date Issued
01-04-1996
Author(s)
Indian Institute of Technology, Madras
Guruswamy, G.
Abstract
We have grown undoped and doped amorphous silicon (a-Si) by low-pressure chemical vapour deposition (LPCVD) from silane at 550 and 580°C. The samples were then post-hydrogenated in an RF hydrogen plasma. The material is characterized by measurement of conductivity, hydrogen content and the slope of the Urbach tail. The effect of fast thermal quenching on the conductivity is investigated and the thermal equilibrium temperature is measured for doped LPCVD a-Si.
Volume
11