Modeling collector current noise PSD of SiGe HBTs including self-heating and non-quasi-static effects

Limitations of existing models for collector current noise power spectral density of silicon germanium heterojunction bipolar transistors are figured out and suitable model modifications are proposed based on non-quasi-static delay and self-heating effects. Modeling results show excellent agreement with device simulated data obtained using hydrodynamic technique. © 2012 IEEE.