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Dielectric relaxation in complex perovskite Ba(Bi <inf>1/2</inf>Ta <inf>1/2</inf>)O <inf>3</inf>
Date Issued
01-01-2012
Author(s)
Mishra, Amodini
Choudhary, S. N.
Choudhary, R. N.P.
Murthy, V. R.K.
Prasad, Kamal
Abstract
A new lead-free perovskite Ba(Bi 1/2Ta 1/2)O 3 was prepared by conventional ceramic fabrication technique at 1,200 °C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (T CC < 4%) up to +125 °C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi 1/2Ta 1/2)O 3. © 2011 Springer Science+Business Media, LLC.
Volume
23