New unified analytical model for I-V characteristics of HEMTs

A unified analytical model for I-V characteristics of HEMTs valid for subthreshold, linear and saturation regions of operation is presented. A smooth transition in the current from subthreshold to above threshold and also from linear to saturation is obtained. Comparison with experimental data shows that the model is accurate and valid over a wide range. Finally, it is established that the model holds a good promise for analog circuit design by subjecting it to a few benchmark tests.