p-type transparent conducting In<inf>2</inf>O<inf>3</inf>-Ag<inf>2</inf>O thin films prepared by reactive electron beam evaporation technique

p-Type In2O3+Ag2O thin films were prepared on glass substrates by reactive electron beam evaporation. These films have shown p-type conductivity and transparency in the visible range. Varying the evaporation rate by electron beam current control, the film conductivity was observed to depend on the evaporation rate, the optimum conditions for p-type conductivity being 80:20 composition at an evaporation rate of 42 A/cm. Films obtained under this condition showed Hall mobility of 8.2 cm2/V-s, resistivity of 22.5 Ω cm and 34% transparency at 500 nm. The physics of the p-type conduction is examined employing the electronegativity equalization and partial charge concepts.