Publication: Flow stress/strain rate/grain size coupling for fcc nanopolycrystals
cris.author.scopus-author-id | 8045960800 | |
cris.author.scopus-author-id | 7202921411 | |
dc.contributor.author | Armstrong, R. W. | |
dc.contributor.author | Rodriguez, P. | |
dc.date.accessioned | 2023-09-20T05:32:11Z | |
dc.date.available | 2023-09-20T05:32:11Z | |
dc.date.issued | 21-12-2006 | |
dc.description.abstract | A Hall-Petch (H-P)-type dependence is demonstrated for reciprocal activation volume measurements for nanocrystalline and conventional grain size, strengthened Ni and Cu materials, consistent with predictions derived from the dislocation pile-up model. The observed H-P dependence indicates that the shear stress for cross-slip must be involved in the full grain size regime for transmission of plastic flow at the grain boundaries of fcc metals. | |
dc.identifier.doi | 10.1080/14786430600764872 | |
dc.identifier.issn | 14786435 | |
dc.identifier.scopus | 2-s2.0-33750079578 | |
dc.identifier.uri | https://apicris.irins.org/handle/IITM2023/47899 | |
dc.relation.ispartofseries | Philosophical Magazine | |
dc.source | Philosophical Magazine | |
dc.title | Flow stress/strain rate/grain size coupling for fcc nanopolycrystals | |
dc.type | Journal | |
dspace.entity.type | Publication | |
oaire.citation.endPage | 5796 | |
oaire.citation.issue | 36 | |
oaire.citation.startPage | 5787 | |
oaire.citation.volume | 86 | |
person.affiliation.city | Chennai | |
person.affiliation.city | College Park | |
person.affiliation.id | 60025757 | |
person.affiliation.id | 60020304 | |
person.affiliation.name | Indian Institute of Technology Madras | |
person.affiliation.name | University of Maryland, College Park |