Options
Thin film growth, electrical transport and ohmic contact studies of p-ZnO
Date Issued
01-12-2010
Author(s)
Kumar, E. Senthil
Chaterjee, Jyothirmoy
Singh, Shubra
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Abstract
We have succeeded in growing a stable and ever eluding p-type (Li, Ni): ZnO using a codoping technique. Pulsed laser deposited (PLD) films grown in a small window of oxygen partial pressures (10-3 - 10-2 mbar) showed room temperature carrier density ∼ 2.1 × 10-17 cm-3̇ Ohmic properties of Ni/Au contact on p-ZnO films were studied using LTLM method. Efforts have also been made to grow different nano forms of ZnO and study their optical properties for various device application prospects. © 2010 IEEE.