Development of an automated high pressure oxidation system (HiPOS)

In this paper the details of an indegenously developed automated High Pressure Oxidation System (HiPOS) are presented. This system is completely computer controlled and is capable of thermal oxidation/nitridation and annealing at pressures upto 10 Bar and temperatures in the range 200–1000°C. The paper includes the experimental results obtained on the dry oxidation of silicon at 900°C at pressures in the range 1 to 10 atmospheres. © 1998 Taylor & Francis Group, LLC.