Electrical and magnetotransport properties of canted antiferromagnet Dy<inf>5</inf>Si<inf>2</inf>Ge<inf>2</inf>

Date Issued
01-12-2002
Author(s)
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Morozkin, Alex V.
Chu, Zili
Yelon, W. B.
Malik, S. K.
Prasad, V.
Subramanyam, S. V.
Abstract
The electrical and magnetotransport properties of canted antiferromagnet Dy5Si2Ge2 are discussed. The DC electrical resistivity measurements confirm the magnetic crossover by a strong change of slope. The resistivity drops abruptly below TN as the spin disorder contribution vanishes. The application of magnetic field suppresses the TN by about 6 K thereby emphasizing the nature of the magnetic order to be antiferromagnetic.