A new unified analytical model for I-V characteristics of HEMTs

A unified analytical model for I-V characteristics of HEMTs valid for subthreshold, linear and saturation regions of operation is presented. A smooth transition in the current,from subthreshold to above threshold and also from linear to saturation is obtained. Comparison with experimental data shows that the model is accurate and valid over a wide range. Finally, it is established that the model holds a good promise for analog circuit design by subjecting it to a few benchmark tests.