Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs

A Hard Switching Fault (HSF) detection technique for SiC MOSFETs is presented in this paper. In fault circumstances, the dependability of SiC MOSFETs is critical and can lead to failure. To detect the HSF situation, the suggested technique solely requires device voltage sensing. Instead of the desaturation method's set blanking time, the proposed method adaptively alters the blanking time during each switching cycle. This allows for speedier identification of the shoot-through occurrence, as well as a reduction in the amplitude of the fault peak current. A discrete 1kV, 32A SiC MOSFET was used in the experimental verification of the proposed approach. The results reveal that the proposed technique works well, with the HSF event being detected in a few tens of nanoseconds.