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The EPR of Gd<sup>3+</sup> in 3CdSO<inf>4</inf>·8H<inf>2</inf>O single crystals
Date Issued
01-01-1978
Author(s)
Kumaraswamy, A.
Sobhanadri, J.
Abstract
The EPR of Gd3+ in 3CdSO4·8H2O single crystals is studied at room temperature (∼25°C) and at Q-band frequencies (∼35 GHz). Two chemically inequivalent Gd3+ ions each of which is trapped at two magnetically inequivalent sites are observed. The spin-Hamiltonian parameters along with the direction cosines of the principal axes of the sites are determined using a least-squares refinement technique. It is shown from the experimental results with the aid of crystal structure data that the two chemically inequivalent sites arise because of different types of charge compensation. Each vacancy of Cd2+ is associated with two magnetically inequivalent Gd3+ ions. The parameters of one site fit approximately to a monoclinic spin Hamiltonian, while those of the other fit to an orthorhombic spin Hamiltonian. It is further shown that the principal y axes of the two chemically inequivalent sites are along the gadolinium-cadmium vacancy directions. © 1978 Academic Press, Inc. All rights reserved.
Volume
31