Physics based modeling of RF noise in SiGe HBTs

Three different noise models are investigated from physical perspective using hydro-dynamic device simulation of 1D SiGe-HBT. An intuitive noise model formulation is proposed based on the 1st and 2nd order charge partitioning across base-emitter and base-collector regions. It is verified that proposed model improves the modeling of base current noise and correlation between the base and collector current noise sources. ©2009 IEEE.