SiGe HBT Device Characterization up-to 500 GHz: Procedure and Layout Improvement of Calibration Standards

In the field of mmW device technology and circuits, SiGe HBT plays a crucial role bridging the performance gap between silicon and III/V transistors technologies. With continuous effort across the globe, high frequency performances have strongly grown during the last decade; e.g., $f_{T}$ and $f_{max}$ values from IHP SiGe 130 nm BiCMOS process showing 470 GHz and 610 GHz, respectively. Accurate characterization is an integral requirement for successful development and deployment of these technologies. Characterization above 100 GHz is a cumbersome task. In this paper, we demonstrate accurate calibration and measurement method based on custom calibration structures up to 500 GHz for ST Microelectronics's SiGe HBT device in 55 nm technology node.