Spike-Time Dependent Plasticity in HfO-Based Ferroelectric FET Synapses

This paper reports a study on spike-timing-dependent plasticity (STDP) in high-k metal gate (HKMG) based ferroelectric Field effect transistors (FeFET). FeFET devices have been fairly well exploited in the context of in-memory computing due to their excellent non-volatile storage characteristics and analog conductance tunability. However, applications of FeFET devices in Spiking Neural Networks (SNN) are yet to be explored properly. This work reports the potential of HfO2 based HKMG-FeFET synapses for SNN hardware by demonstrating energy-efficient STDP learning.