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  1. Home
  2. Indian Institute of Technology Madras
  3. Publication10
  4. Characterization of interface between CuInSe<inf>2</inf> and In <inf>2</inf>O<inf>3</inf>
 
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Characterization of interface between CuInSe<inf>2</inf> and In <inf>2</inf>O<inf>3</inf>

Date Issued
01-11-2005
Author(s)
Malar, P.
Mohanty, Bhaskar Chandra
S Kasiviswanathan 
Indian Institute of Technology, Madras
DOI
10.1016/j.jpcs.2005.09.027
Abstract
CuInSe2/In2O3 structures were formed by depositing CuInSe2 films by stepwise flash evaporation onto In 2O3 films, which were grown by DC reactive sputtering of In target in presence of (Ar+O2) gas mixture. Phase purity of the CuInSe2 and In2O3 films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe2/In2O3/glass structures showed sharp peaks corresponding to (112) plane of CuInSe2 and (222) plane of In2O3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe2/In2O 3/Si structures in order to characterize the interface between In2O3 and CuInSe2. The results show that the CuInSe2 films were near stoichoimetric and In2O 3 films had oxygen deficient composition. CuInSe2/In 2O3 interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In2O 3/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces. © 2005 Elsevier Ltd. All rights reserved.
Volume
66
Subjects
  • A. Interfaces

  • A. Thin films

  • B. Vapar deposition

  • C. Electron microscop...

  • C. X-ray diffraction

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