An easily implementable gate charge controlled active gate driver for SiC MOSFET

SiC MOSFETs have the ability to switch within few tens of nanoseconds (<50ns). But when switched with full speed under moderate amount of parasitic inductance(100nH-150nH), it exhibits a large ringing for few hundreds of nano seconds. Present paper proposes a novel, simple, low cost active gate driver to address this issue. The present work involves the design of a digital gate driver using a self commutating switch, which turns off by itself when the set gate charge to the device is delivered. The proposed method is simple and very effective to dampen out the oscillation in the device. The proposed gate driver is implemented in double pulse hardware test set up with 1.2kV, 36A Cree SiC MOSFET (C2M0080120D).