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Electrical transport and magnetic ordering in R<inf>2</inf>Ti<inf>3</inf>Ge<inf>4</inf> (R = Dy, Ho and Er) compounds
Date Issued
01-01-2002
Author(s)
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Indian Institute of Technology, Madras
Morozkin, A. V.
Geethakumary, T.
Hariharan, Y.
Abstract
New R2Ti3Ge4 (R = Dy, Ho and Er) intermetallic compounds have been synthesized and characterized by X-ray diffraction and low temperature ac magnetic susceptibility, electrical resistivity and thermoelectric power measurements were carried out. The compounds crystallize in the parent, Sm5Ge4-type orthorhombic structure (space group Pnma) and lanthanide contraction is observed as one moves along the rare-earth series. The changeover from paramagnetic to antiferro-magnetic phase happens at low temperatures and the ordering temperature scales with the de Gennes factor. The electrical resistivity is metallic with a negative curvature above 100 K. Thermopower displays a weak maximum at temperatures less than 50 K signifying the possible phonon and magnon drag effects.
Volume
58