Analytical threshold voltage model for SOI MOSFET including the potential drop in the SOI substrate

An analytical model for the threshold voltage of fully depleted SOI MOSFETs, taking into account the substrate voltage drop is presented in this paper. This inclusion of the substrate voltage drop improves the accuracy of the model. This model shows a good agreement with experimental results. The effect of varying back oxide thickness (BOX) and doping concentration in the substrate (NAS) is studied.