Fabrication and characterization of Al<inf>x</inf>Ga<inf>1-x</inf>As-GaAs based nanofabricated resonant tunneling light emitting diodes

The resonant tunneling light emitting diodes (RTLED) structure was measured. The structure displayed a decrease of current following a resonant switch that directly enhanced the radiative recombination process. The proposed device structure consisted of nanopillars which provided the carrier confinement and injected more carriers into the active region to produce light emission.