Limitations on the range of measurements of sheet resistivity of shallow diffused layers for profiling by the four-point-probe technique

It is found that the standard four-point probe resistivity measurement and stripping technique used for measuring impurity profile in diffused semiconductor layers can provide reliable information only if certain limitations are carefully observed. To get the actual surface concentration for profiling, it has been found necessary to predetermine the appropriate range of current and voltage. Approximate ranges for studying phosphorus and boron in silicon are reported in this paper. The phosphorus profile obtained by this technique by successive measurement of sheet resistivity after anodic oxidation and stripping distinctly shows a kink and tail structure obtained without annealing. © 1982.