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Measurement of the absolute branching fraction of inclusive semielectronic Ds+ decays
Date Issued
01-07-2021
Author(s)
Ablikim, M.
Achasov, M. N.
Adlarson, P.
Ahmed, S.
Albrecht, M.
Aliberti, R.
Amoroso, A.
An, M. R.
An, Q.
Bai, X. H.
Bai, Y.
Bakina, O.
Baldini Ferroli, R.
Balossino, I.
Ban, Y.
Begzsuren, K.
Berger, N.
Bertani, M.
Bettoni, D.
Bianchi, F.
Bloms, J.
Bortone, A.
Boyko, I.
Briere, R. A.
Cai, H.
Cai, X.
Calcaterra, A.
Cao, G. F.
Cao, N.
Cetin, S. A.
Chang, J. F.
Chang, W. L.
Chelkov, G.
Chen, D. Y.
Chen, G.
Chen, H. S.
Chen, M. L.
Chen, S. J.
Chen, X. R.
Chen, Y. B.
Chen, Z. J.
Cheng, W. S.
Cibinetto, G.
Cossio, F.
Cui, X. F.
Dai, H. L.
Dai, X. C.
Dbeyssi, A.
De Boer, R. E.
Dedovich, D.
Deng, Z. Y.
Denig, A.
Denysenko, I.
Destefanis, M.
De Mori, F.
Ding, Y.
Dong, C.
Dong, J.
Dong, L. Y.
Dong, M. Y.
Dong, X.
Du, S. X.
Fan, Y. L.
Fang, J.
Fang, S. S.
Fang, Y.
Farinelli, R.
Fava, L.
Feldbauer, F.
Felici, G.
Feng, C. Q.
Feng, J. H.
Fritsch, M.
Fu, C. D.
Gao, Y.
Gao, Y.
Gao, Y.
Gao, Y. G.
Garzia, I.
Ge, P. T.
Geng, C.
Gersabeck, E. M.
Gilman, A.
Goetzen, K.
Gong, L.
Gong, W. X.
Gradl, W.
Greco, M.
Gu, L. M.
Gu, M. H.
Gu, Y. T.
Guan, C. Y.
Guo, A. Q.
Guo, L. B.
Guo, R. P.
Guo, Y. P.
Guskov, A.
Han, T. T.
Han, W. Y.
Hao, X. Q.
Abstract
We measure the inclusive semielectronic decay branching fraction of the Ds+ meson. A double-tag technique is applied to e+e- annihilation data collected by the BESIII experiment at the BEPCII collider, operating in the center-of-mass energy range 4.178-4.230 GeV. We select positrons from Ds+→Xe+νe with momenta greater than 200 MeV/c and determine the laboratory momentum spectrum, accounting for the effects of detector efficiency and resolution. The total positron yield and semielectronic branching fraction are determined by extrapolating this spectrum below the momentum cutoff. We measure the Ds+ semielectronic branching fraction to be (6.30±0.13(stat.)±0.09(syst.)±0.04(ext.))%, showing no evidence for unobserved exclusive semielectronic modes. We combine this result with external data taken from literature to determine the ratio of the Ds+ and D0 semielectronic widths, Γ(Ds+→Xe+νe)Γ(D0→Xe+νe)=0.790±0.016(stat.)±0.011(syst.)±0.016(ext.). Our results are consistent with and more precise than previous measurements.
Volume
104