An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge

Karumuri, Naveen; Sreenidhi, T.; Nandita  DasGupta; Amitava Das  Gupta

doi:10.1109/ICEmElec.2012.6636230

An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge

Date Issued

01-01-2012

Author(s)

Karumuri, Naveen

Sreenidhi, T.

Nandita DasGupta

Indian Institute of Technology, Madras

Amitava Das Gupta

Indian Institute of Technology, Madras

DOI

10.1109/ICEmElec.2012.6636230

Abstract

A closed form analytical expression for the 2DEG (channel charge) in AlGaN/GaN HEMT is presented. This includes the effect of transverse electric field on the piezoelectric bound charge due to electromechanical coupling. The present model explains the dependence of bound piezoelectric charge and channel 2DEG concentration on gate bias. Models with and without electromechanical coupling are compared and explained. © 2012 IEEE.

Subjects

Options

An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge