The Correct Equivalent Box Representation for the Buried Layer of BC MOSFET's in Terms of the Implantation Parameters

From the charge-voltage considerations, it is shown that the Gaussian-implanted profile of buried layers can be correctly represented by an equivalent box. The paper also shows that the average doping and the depth of this box can be obtained directly from a knowledge of the implantation parameters. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.