Preparation and properties of zinc phosphide thin films

Zinc phosphide (Zn3P2) was prepared by the carbon reduction process. Thin films of Zn3P2 were evaporated onto glass substrates at various substrate temperatures. Films evaporated onto substrates at and above 220 °C were polycrystalline in nature. Films of different thicknesses were grown and their electrical conductivity was measured in the temperature range 100-300 K. Four characteristic energy gaps of 1.3, 1.66, 1.75 and 1.82 eV were obtained from the analysis of the optical absorption spectrum. © 1986.