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Concentration dependence of diflfusivity in polysilicon
Date Issued
01-01-1992
Author(s)
Murti, M. R.
Reddy, K. V.
Abstract
Diffusion of phosphorus in polycrystalline silicon is carried out from POCl3 source at 1000°C for 1 hour. The diffusion profiles were obtained and were analysed to get diffusivity as a function of concentration.
Volume
1523