The role of impurities in the dielectric properties of Zn<inf>3</inf>P<inf>2</inf> phosphide crystals

The dielectric properties of zinc phosphide (Zn3P2) crystals doped with impurities such as magnesium, indium, tin and selenium have been studied in the frequency range 103-105 Hz and in the temperature T range 300-500 K. It may be inferred from the present study that doping Zn3P2 with the above-mentioned impurities results either in a reduction in the number of grain boundaries or in a decrease in the space charge density at room temperature. At higher temperatures the behaviour is not systematic. © 1986.