Publication: Studies on hot wall deposited Zn<inf>3</inf>P<inf>2</inf> thin film surfaces and interfaces
Date
01-01-1989
Authors
Suresh Babu, V.
Vaya, P. R.
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Abstract
Thin films of Zn3P2 have been grown on mica and glass substrates at various growth temperatures ranging from 200 to 350°C by the hot wall deposition technique. The surface morphology of these films was studied by the scanning electron microscope (SEM). The grain size was observed to be increasing with increasing substrate temperature. The electrical resistivities of these films were very high (-105 micro cm) depending upon the preparation conditions like substrate temperature and pressure of the ambient gas during growth etc. The resistivity was brought down to a range 102 to 103 micro cm by silver doping during growth of the film. Schottky barriers were formed on these doped thin films using Al (i) on the as-grown film surface and (ii) on a surface after chemical treatment using dilute NaOH, acetone and deionized water in sequence. A marked change in the characteristics of AlZn3P2 junctions was observed after surface etching. © 1989.