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T<inf>c</inf> suppression and impurity band structure in overdoped superconducting Boron-doped diamond films
Date Issued
15-12-2018
Author(s)
Kumar, Dinesh
Chandran, Maneesh
Shukla, D. K.
Phase, D. M.
Indian Institute of Technology, Madras
Ramachandra Rao, M. S.
Abstract
Our work investigates the impurity band and the core excitonic level evolution of a series of systematically boron doped diamond (BDD) films using Raman and X-ray absorption (XAS) spectroscopies. The resistivity versus temperature data shows that Tc of the BDD films achieves a peak at a maximum gaseous phase boron to carbon ratio, [[Formula presented]]max, beyond which Tc drops gradually as a result of excess defect formation, revealing a dome-shaped behaviour. Study of lattice expansion clearly shows the unambiguous presence of substitutional boron atoms beyond [[Formula presented]]max. Direct probe of the impurity band using XAS show a systematic increase in the absorption intensity of the bandgap states which ultimately degrades as the limit of [Formula presented]>[[Formula presented]]max is exceeded. The binding energy of the BDD 1s core exciton reveal a shallow measured value of 0.11 eV. This is less than earlier found values of 0.19 - 1.2 eV, in various reports for intrinsic diamond.
Volume
555