Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating

A physics-based compact model for silicon-on-insulator lateral double-diffused metal-oxide-semiconductor transistors including impact ionization, subsequent snapback (SB), and self-heating (SH) is presented. It is observed that the SB effect is caused by the turn-on of the associated parasitic bipolar transistor. The model includes the effect of device SH using resistive thermal networks for each region. Comparisons of modeling results with device simulation data show that, over a wide range of bias voltages, the model exhibits excellent accuracy without any convergence problem. © 2011 IEEE.