Laser induced crystallization of amorphous Se80Te 20 alloy thin films

The present study is concerned with the laser induced crystallization of amorphous thin films of Se 80 Te 20 alloy. The films were prepared on a glass substrate by vacuum evaporation from bulk Se 80 Te 20 alloy. The as-grown films were amorphous. The crystallization induced by an argon ion laser irradiation was studied at different beam intensities ranging from 50 mW to 600 mW and different time durations. The 488 nm (blue green) line was chosen for irradiation. The crystallization and growth processes in the laser irradiated samples were studied in the electron microscope at low temperature (173 K). It was seen that the crystallization was quicker at higher laser beam intensities as expected. The conditions for the onset of nucleation and the progress of crystallization in these films are compared with those observed in the films irradiated by electron beam. © 1992, Taylor & Francis Group, LLC. All rights reserved.