Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors

In this paper, we propose an extraction method for emitter series resistance (RE) following a reliable extraction of thermal resistance (RTH) and collector series resistance (RCx) in silicon germanium heterojunction bipolar transistors. While the effect of self-heating non-negligibly influences the extracted RE value, our proposed method of RCx extraction in the inverse active region of operation ensures a self-heating independent value. The proposed method is applied on the SPICE generated syntheti c data in order to be able to directly verify the accuracy of the extracted parameters. It is observed that the proposed method yields an excellent accuracy in the extracted parameters.