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High pressure oxidation of Si(100) for production of ultrathin oxide metal-insulator-semiconductor diodes
Date Issued
30-01-1988
Author(s)
Indian Institute of Technology, Madras
Bhat, K. N.
Abstract
It is shown here that ultrathin oxides can be grown with excellent control by a low temperature, high pressure oxidation process. The I-V characteristics of tunneling metal-insulator-semiconductor diodes fabricated using this process demonstrate that the interface state density can be reduced by an order of magnitude compared with low temperature, atmospheric pressure oxidation. © 1988.
Volume
156